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Graphene Structures-Based 2D Nanotransistors (Review)

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Abstract

The structure and main parameters of field-effect transistors (FETs) based on gapless graphene (Gr) and its derivatives with semiconducting properties, transistors on flexible substrates, tunneling transistors (TFETs) based on graphene mono- and bilayers, and transistors based on graphene nanoribbons are described.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-29-20080.

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  1. Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, 111538, Moscow, Russia

    V. P. Ponomarenko & V. S. Popov

  2. Moscow Institute of Physics and Technology, 141701, Dolgoprudnyi, Moscow oblast, Russia

    V. P. Ponomarenko & V. S. Popov

  3. Shvabe Holding, 129366, Moscow, Russia

    S. V. Popov

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  1. V. P. Ponomarenko
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Ponomarenko, V.P., Popov, V.S. & Popov, S.V. Graphene Structures-Based 2D Nanotransistors (Review). J. Commun. Technol. Electron. 66, 1108–1122 (2021). https://doi.org/10.1134/S1064226921090138

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