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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.

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Authors and Affiliations

  1. Orion Research and Production Association, Moscow, 111538, Russia

    I. D. Burlakov, K. O. Boltar, P. V. Vlasov & A. A. Lopukhin

  2. Moscow Technological University (MIREA), Moscow, 119454, Russia

    I. D. Burlakov

  3. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow oblast, 141700, Russia

    K. O. Boltar

  4. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russia Academy of Sciences, Novosibirsk, 630090, Russia

    A. I. Toropov & K. S. Zhuravlev

  5. VDM Technologies Scientific and Engineering Center, Moscow, 121002, Russia

    V. V. Fadeev

Authors
  1. I. D. Burlakov
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  2. K. O. Boltar
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  3. P. V. Vlasov
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  4. A. A. Lopukhin
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  5. A. I. Toropov
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  6. K. S. Zhuravlev
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  7. V. V. Fadeev
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Corresponding author

Correspondence to I. D. Burlakov.

Additional information

Original Russian Text © I.D. Burlakov, K.O. Boltar, P.V. Vlasov, A.A. Lopukhin, A.I. Toropov, K.S. Zhuravlev, V.V. Fadeev, 2016, published in Prikladnaya Fizika, 2016, No. 3, pp. 58–64.

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Burlakov, I.D., Boltar, K.O., Vlasov, P.V. et al. Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate. J. Commun. Technol. Electron. 62, 309–313 (2017). https://doi.org/10.1134/S1064226917030068

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  • DOI: https://doi.org/10.1134/S1064226917030068

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