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Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

The results of investigation of planar photodiodes (PDs) in a focal plane array (FPA) based on a heteroepitaxial InGaAs/InP structure are reported. The FPA has a size of 320 × 256 elements with a pitch of 30 μm, which are hybridized with various ROIC readout circuits. It is demonstrated that the PD reverse bias should be no lower than 2 V in order to suppress the FPA intercoupling at the room temperature. It is found that the dark current may be reduced considerably by cooling the FPA to–20°С with a two-stage thermoelectric cooler. The best average room-temperature dark current over the FPA planar photodiodes is 0.22 pA at an optimum PD bias of–2.4 V.

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Authors and Affiliations

  1. Orion Research and Production Association, ul. Kosinskaya 9, Moscow, 111538, Russia

    D. S. Andreev, K. O. Boltar, P. V. Vlasov, N. A. Irodov & A. A. Lopuhin

  2. Moscow Institute of Physics and Technology (State University), Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700, Russia

    K. O. Boltar

Authors
  1. D. S. Andreev
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  2. K. O. Boltar
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  3. P. V. Vlasov
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  4. N. A. Irodov
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  5. A. A. Lopuhin
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Correspondence to D. S. Andreev.

Additional information

Original Russian Text © D.S. Andreev, K.O. Boltar, P.V. Vlasov, N.A. Irodov, A.A. Lopuhin, 2014, published in Uspekhi Prikladnoi Fiziki, 2014, Vol. 2, No. 1, pp. 60–64.

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Andreev, D.S., Boltar, K.O., Vlasov, P.V. et al. Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure. J. Commun. Technol. Electron. 61, 1220–1225 (2016). https://doi.org/10.1134/S1064226916100028

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  • DOI: https://doi.org/10.1134/S1064226916100028

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