Skip to main content
SpringerLink
Log in

A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm

  • Articles from the Russian Journal Prikladnaya Fizika
  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract

A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, 4, 8, or 16 outputs has been designed, fabricated, and studied. The main parameters of this chip are the following: the charge capacity is up to 200000 electrons, the frame rate is higher than 600 Hz at the maximum resolution, and the integrated sensitivity is up to 1000 V/(lx s).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Meynants, B. Dierickx, and D. Scheffer, Proc. SPIE 3410, 68 (1998).

    Article  Google Scholar 

  2. P. Magnan, Nucl. Instrum. Methods Phys. Res., Sect. A 504 (1-3), 199 (2003).

    Article  Google Scholar 

  3. J. Janesick, J. Andrews, J. Tower, et al., Proc. SPIE 6690, 3 (2007).

    Google Scholar 

  4. J. Bogaerts, B. Dierickx, G. Meynants, and D. Uwaerts, IEEE Trans. Electron Devices 50, 84 (2003).

    Article  Google Scholar 

  5. B. Dierickx, S. Bellis, N. Witvrouwen, et al., Proc. SPIE 7826, 78261Q (2010).

    Article  Google Scholar 

  6. M. Downing, J. Kolb, Ph. Balard, et al., Proc. SPIE 9154, 91540Q (2014).

    Article  Google Scholar 

  7. G. Meynants, J. Bogaerts, B. Wolfs, et al., in Proc. Int. Image Sensor Workshop, Snowbird Resort (UT), USA, Jun. 12–16, 2013 (Int. Image Sensor Soc., 2013), Vol. 2, p. 013.

    Google Scholar 

  8. A. Krymski, in Proc. 2015 Int. Image Sensor Workshop, Vaals, Netherlands, Jun. 8–11, 2015 (Int. Image Sensor Soc., 2013). http://www.imagesensors.org/Past%20Workshops/2015%20Workshop/2015%20Papers/Sessions/Session_14/14-01_Krymski_paper_IISW15-UPDATED.pdf.

  9. D. V. Borodin, Yu. V. Osipov, A. S. Skrylev, and V. V. Vasil’ev, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 1(222), 93 (2009).

    Google Scholar 

  10. D. V. Borodin, Yu. V. Osipov, T. I. Anisimova, et al., in The Solid-State Electronics, Complex Functional Radioelectronic Units (Proc. XIII Sci.-Eng. Conf., Moscow, 2014 (JSC NPP Pul’sar, Moscow, 2014), p. 141.

    Google Scholar 

  11. Yu. V. Osipov, D. V. Borodin, and V. V. Vasil’ev, in Systems of Observation, Monitoring and Remote Sensing of the Earth (Proc. X Sci.-Eng. Conf., Gelendzhik, Sept. 10–13, 2013) (Popov RNTO RES, Moscow, 2013), p. 292.

    Google Scholar 

  12. http://www.onsemi.com/PowerSolutions/product.do?id= LUPA1300-2.

  13. http://www.photonis.com/en/product/lynx-cmos.

  14. GOST 28953. Photosensitive Charge-Transfer Devices. Methods for Measuring Parameters (Standartinform, Moscow, 2014) [in Russian].

Download references

Author information

Authors and Affiliations

  1. RTC Inpex, ltd, Mytishchi, Moscow oblast, 141013, Russia

    D. V. Borodin, Yu. V. Osipov & V. V. Vasil’ev

  2. JSC NPP Pul’sar, Moscow, 105187, Russia

    D. V. Borodin & Yu. V. Osipov

Authors
  1. D. V. Borodin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. V. Osipov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. V. Vasil’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to D. V. Borodin.

Additional information

Original Russian Text © D.V. Borodin, Yu.V. Osipov, V.V. Vasil’ev, 2016, published in Prikladnaya Fizika, 2016, No. 2, pp. 76–81.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Borodin, D.V., Osipov, Y.V. & Vasil’ev, V.V. A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm. J. Commun. Technol. Electron. 62, 299–303 (2017). https://doi.org/10.1134/S1064226917030032

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226917030032

Keywords

Search

Navigation