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Excess noise and nonlinear effects in low-dimensional conductors

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Abstract

Experimental results on the 1/f γexcess noise and the nonlinearity of the I–V characteristics in nanosized semiconductors based on thin metal (Ni, Cu, and Au) films at various current loads and temperatures are presented. It is demonstrated that relatively slow processes related to the heat exchange of film and substrate serve as the reason for the nonlinearity of the I-V characteristic in low-dimensional conductors. A method to determine the melting point of low-dimensional conductors based on the measurement of the positions of the voltage fluctuation peaks on the temperature-time scale caused by the primary fluctuations of the film resistance in the vicinity of the melting point in the presence of a low-density current flow in the sample and slow heating. The starting temperature of melting of nanosized nickel and gold films on oxidized silicon is experimentally determined.

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Authors
  1. G. P. Zhigal’ski
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Original Russian Text © G.P. Zhigal’skii, 2010, published in Radiotekhnika i Electronika, 2010, Vol. 55, No. 3, pp. 261–276.

The most important results were reported at the XXXVIIXXXIX International Seminars on Noise and Degradation Processes in Semiconductor Devices (2006–2008) and were presented in the corresponding Proceedings.

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Zhigal’ski, G.P. Excess noise and nonlinear effects in low-dimensional conductors. J. Commun. Technol. Electron. 55, 241–255 (2010). https://doi.org/10.1134/S1064226910030010

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  • DOI: https://doi.org/10.1134/S1064226910030010

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