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Current-voltage and noise characteristics of an inhomogeneous schottky-barrier contact

  • Radio Phenomena in Solids and Plasma
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Abstract

A Schottky-barrier (SB) metal/semiconductor contact (MSC) is considered. A model contact characterized by the normal distribution of the SB height and the corresponding distribution of the series resistance over the contact area is investigated numerically. A general approach to the analysis of inhomogeneous and homogeneous contacts is demonstrated. The approach is based on the concept of the nonlinear dependence of the barrier height (effective height in the case considered) on the bias voltage. An analytic approximation corresponding to the known empirical expression is obtained for the current-voltage characteristic of the contact. The model considered is applied to interpret experimental current and temperature dependences of the 1/f-noise level in SB contacts.

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References

  1. V. G. Bozhkov, Izv. Vyssh. Uchebn. Zaved., Radiofiz. 45, 416 (2002).

    Google Scholar 

  2. V. G. Bozhkov and D. Ju. Kuzyakov, J. Appl. Phys. 92, 4502 (2002).

    Article  Google Scholar 

  3. V. G. Bozhkov and S. E. Zaitsev, Izv. Vyssh. Uchebn. Zaved., Radiofiz. 47(9), 769 (2004).

    Google Scholar 

  4. V. G. Bozhkov and S. E. Zaitsev, Izv. Vyssh. Uchebn. Zaved., Fiz. 48(3), 81 (2005).

    Google Scholar 

  5. V. G. Bozhkov and A. A. Kashkan, Elektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 7, 12 (1981).

  6. V. G. Bozhkov and O. Yu. Malakhovskii, Izv. Vyssh. Uchebn. Zaved., Fiz. 29(10), 87 (1986).

    Google Scholar 

  7. M. Wittmer, Phys. Rev. B 42, 5249 (1990).

    Article  Google Scholar 

  8. M. Wittmer, Phys. Rev. B 43, 4385 (1991).

    Article  Google Scholar 

  9. J. H. Werner and H. H. Guttler, J. Appl. Phys. 69, 1522 (1991).

    Article  Google Scholar 

  10. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham, J. Appl. Phys. 70, 7403 (1991).

    Article  Google Scholar 

  11. R. T. Tung, Material Sci. and Engineering: R: Reports 35(1–3), 1 (2001).

    Article  Google Scholar 

  12. S. Chand and J. Kumar, J. Appl. Phys. 82, 5005 (1997).

    Article  Google Scholar 

  13. S. Chand and J. Kumar, Semicond. Sci. Technol. 12, 889 (1997).

    Article  Google Scholar 

  14. S. Chand, J. Semicon. Sci. Technol. 17(7), L36 (2002).

    Article  Google Scholar 

  15. S. Zhu, R. I. Van Meirhaeghe, C. Detavernier, et al., Solid-State Electron. 44, 663 (2000).

    Article  Google Scholar 

  16. J. Osvald, J. Appl. Phys. 85, 1935 (1999).

    Article  Google Scholar 

  17. E. Dobrocka and J. Osvald, Appl. Phys. Lett. 65, 575 (1994).

    Article  Google Scholar 

  18. Zs. J. Horvath and Vo Van Tuyen, Appl. Phys. Lett. 66, 3068 (1995).

    Article  Google Scholar 

  19. Y. P. Song, R. L. Van Meirhaeghe, W. H. Laflere, and F. Cardon, Solid-State Electron. 29, 633 (1986).

    Article  Google Scholar 

  20. V. G. Bozhkov, T. M. Tabakaeva, and A. A. Usol’tsev, izv. Vyssh. Uchebn. Zaved., Radiofiz. 45(7), 607 (2002).

    Google Scholar 

  21. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).

    Google Scholar 

  22. O. Yu. Malakhovskii, V. G. Bozhkov, A. G. Bychkov, and I. V. Golovizina, Radiotekh. Elektron. (Moscow) 37, 142 (1992).

    Google Scholar 

  23. V. G. Bozhkov and O. V. Vasiliev, Solid-State Electron. 44, 1487 (2000).

    Article  Google Scholar 

  24. T. S. Hsu, IEEE Trans. Electron Devices 17, 496 (1970).

    Google Scholar 

  25. V. G. Bozhkov, Radiotekh. Elektron. (Moscow) 42, 494 (1997) [J. Commun. Technol. Electron. 42, 458 (1997)].

    Google Scholar 

  26. U. Rau, H. H. Guttler, and J. H. Werner, in Noise in Physical Systems and 1/f Fluctuations, Ed. by T. Musha, S. Sato, and M. Yamamoto (Ohmsha, IOS, 1991), p. 213.

  27. V. G. Bozhkov, O. Yu. Malakhovskii, V. E. Leuskii, and I. A. Strukov, Radiotekh. Elektron. (Moscow) 28, 1182 (1983).

    Google Scholar 

  28. V. G. Bozhkov and S. E. Zaitsev, Izv. Vyssh. Uchebn. Zaved., Fiz. 48(10), 77 (2005).

    Google Scholar 

  29. F. A. Padovani and G. G. Sumner, J. Appl. Phys. 36, 3744 (1965).

    Article  Google Scholar 

  30. Yu. A. Gol’dberg, E. A. Posse, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 5, 468 (1971).

    Google Scholar 

  31. R. Hackam and P. Harrop, IEEE Trans. Electron Devices 19, 1231 (1972).

    Google Scholar 

  32. V. G. Bozhkov, A. A. Usol’tsev, and A. V. Khan, Radiotekh. Elektron. (Moscow) 31, 180 (1986).

    Google Scholar 

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Authors
  1. V. G. Bozhkov
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  2. S. E. Zaitsev
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Additional information

Original Russian Text © V.G. Bozhkov, S.E. Zaitsev, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 1, pp. 97–105.

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Bozhkov, V.G., Zaitsev, S.E. Current-voltage and noise characteristics of an inhomogeneous schottky-barrier contact. J. Commun. Technol. Electron. 52, 87–95 (2007). https://doi.org/10.1134/S1064226907010111

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  • DOI: https://doi.org/10.1134/S1064226907010111

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