Abstract
Light-emitting III–N heterostructures are grown by gas-phase epitaxy from organometallic compounds on SiC/Si (111) templates (substrates) formed using matched atomic substitution. Investigations of the optical and structural properties of heterostructures are carried out in order to reveal the formation of defects in the structures. It is shown that such heterostructures exhibit specific features of the growth of the (Al,Ga)N buffer layer associated with the presence of pores in Si under the SiC/Si interface. The use of an optimized buffer layer design makes it possible to significantly reduce the dislocation density and form an active region with good structural quality.
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ACKNOWLEDGMENTS
The synthesis of SiC/Si films was carried out using the equipment of the Physics, Chemistry, and Mechanics of Crystals and Thin Films Center for Collective Use of the Institute of Machine Science Problems of the Russian Academy of Sciences (St. Petersburg).
Funding
A.S. Grashchenko and S.A. Kukushkin performed their part of the work with the support of the Ministry of Science and Higher Education of the Russian Federation as a part of state order to the Federal State Unitary Enterprise Institute of Machine Science Problems of the Russian Academy of Sciences under contract no. FFNF-2021-0001. A.V. Osipov performed his part of the work with the support of the Ministry of Science and Higher Education of the Russian Federation as a part of a state order under a contract of St. Petersburg State University no. 61520973.
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Translated by S. Rostovtseva
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Cherkashin, N.A., Sakharov, A.V., Nikolaev, A.E. et al. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates. Tech. Phys. Lett. 47, 753–756 (2021). https://doi.org/10.1134/S106378502108006X
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DOI: https://doi.org/10.1134/S106378502108006X