Abstract
A three-layer heterostructure consisting of AlN (∼0.72 μm thick), AlGaN (∼ 1.82 μm thick), and GaN (∼2.2 μm thick) layers has been grown by hydride–chloride vapor phase epitaxy (HVPE) method on a Si substrate with a SiC buffer nanolayer. The heterostructure was studied using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and other techniques. The results showed that SiC/Si substrates can be used for growing films of III–V semiconductor compounds by HVPE at a high rate (~66 μm/h) free of cracks and with small residual elastic stresses (~160 MPa).
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REFERENCES
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 31300 (2014).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56, 1507 (2014).
I. P. Kalinkin, S. A. Kukushkin, and A. V. Osipov, Semiconductors 52, 802 (2018).
A. V. Red’kov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Likhachev, A. V. Nashchekin, and I. P. Soshnikov, Phys. Solid State 61, 299 (2019).
S. A. Kukushkin, A. M. Mizerov, A. V. Osipov, A. V. Redkov, and S. N. Timoshnev, Thin Solid Films 646, 158 (2018).
P. A. Temple and C. E. Hathaway, Phys. Rev. B 7, 3685 (1973).
S. I. Nakashima and H. Harima, Phys. Status Solidi A 162, 39 (1997).
V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, and R. A. Evarestov, Phys. Rev. B 58, 12899 (1998).
S. Tripathy, S. J. Chua, P. Chen, and Z. L. Miao, J. Appl. Phys. 92, 3503 (2002).
L. Bergman, M. D. Bremser, W. G. Perry, R. F. Davis, M. Dutta, and R. J. Nemanich, Appl. Phys. Lett. 71, 2157 (1997).
ACKNOWLEDGMETS
Investigations were performed using instrumentation of the unique scientific installation “Physics, Chemistry, and Mechanics of Crystals and Thin Films” (Institute of Problems of Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg). The authors thank P.A. Somov from demonstration laboratory of “Teskan” Ltd for his assistance in electron-microscopic studies.
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Sharofidinov, S.S., Kukushkin, S.A., Red’kov, A.V. et al. Growing III–V Semiconductor Heterostructures on SiC/Si Substrates. Tech. Phys. Lett. 45, 711–713 (2019). https://doi.org/10.1134/S1063785019070277
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DOI: https://doi.org/10.1134/S1063785019070277