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Nanoisland Shape Variation during Selective Epitaxy

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Abstract

A model is proposed that describes variation of the shape of nanoislands grown by method of selective epitaxy. The model is based on minimization of the system surface energy at a given volume. In terms of the adopted morphology, the island is bounded by (101) and (112) side facets and a (001) top facet with varying dimensions dependent on the volume. Areas, lengths, and aspect ratios of competing facets are calculated as functions of the island volume.

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Funding

This work was supported in part by the Russian Science Foundation, project no. 19-72-30004.

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Authors and Affiliations

  1. St. Petersburg State University, 199034, St. Petersburg, Russia

    V. G. Dubrovskii

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  1. V. G. Dubrovskii
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Correspondence to V. G. Dubrovskii.

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Translated by P. Pozdeev

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Dubrovskii, V.G. Nanoisland Shape Variation during Selective Epitaxy. Tech. Phys. Lett. 47, 701–704 (2021). https://doi.org/10.1134/S1063785021070191

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