Abstract
We report on the results of investigations of the millimeter-wave field-effect transistors with a 0.14‑μm T-shaped gate with pseudomorphic Al0.3Ga0.7As–In0.22Ga0.78As–Al0.3Ga0.7As heterostructures with additional potential barriers based on a two-sided donor–acceptor channel doping. At a frequency of 40 GHz in a wide gate voltage range, the maximum stable gain of more than 15 dB has been obtained. The maximum oscillation frequency of the device is about 250 GHz, the open-channel specific current density is about 0.7 A/mm, and the gate–drain breakdown voltage is 22–31 V for different versions.
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Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).
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Translated by E. Bondareva
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Bogdanov, S.A., Bakarov, A.K., Zhuravlev, K.S. et al. A Millimeter-Wave Field-Effect Transistor Based on a Pseudomorphic Heterostructure with an Additional Potential Barrier. Tech. Phys. Lett. 47, 329–332 (2021). https://doi.org/10.1134/S1063785021040052
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DOI: https://doi.org/10.1134/S1063785021040052