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Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Electron transport and optical properties are studied for structures with atomic tin nanowires (Sn-NWs) on vicinal GaAs substrates with misorientation angles of 0.3 and 3° with respect to the exact (100) orientation. Saturation-current anisotropy is revealed in the current–voltage characteristics of the samples for current flows along (‖ orientation) and across (⊥ orientation) the Sn-NWs: the current ratios I ‖/I ⊥ are ∼1.2 and ∼2.5 for homostructures and pseudomorphic high electron mobility transistor (PHEMT) structures, respectively. The effect of the pulling voltage and illumination on current oscillations is studied in real time in the case of current flows perpendicular to the Sn-NWs. Clear anisotropy of the PHEMT frequency characteristics is shown.

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Authors and Affiliations

  1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi pr. 7, str.5, Moscow, 117105, Russia

    R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugayev & P. P. Maltsev

Authors
  1. R. A. Khabibullin
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  2. A. E. Yachmenev
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  3. D. V. Lavrukhin
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  4. D. S. Ponomarev
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  5. A. S. Bugayev
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  6. P. P. Maltsev
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Corresponding author

Correspondence to R. A. Khabibullin.

Additional information

Dedicated to the blessed memory of Alexei Petrovich Senichkin, Cand. Sci. (Tech.), the founder of the research area on the development of atomic tin nanowires on vicinal gallium-arsenide surfaces.

Original Russian Text © R.A. Khabibullin, A.E. Yachmenev, D.V. Lavrukhin, D.S. Ponomarev, A.S. Bugayev, P.P. Maltsev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 185–190.

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Khabibullin, R.A., Yachmenev, A.E., Lavrukhin, D.V. et al. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates. Semiconductors 50, 185–190 (2016). https://doi.org/10.1134/S1063782616020123

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  • DOI: https://doi.org/10.1134/S1063782616020123

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