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Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering

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Abstract

Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total thickness of 450 nm, and hydride vapor-phase epitaxy (HVPE) to a final thickness of 2 μm. Synthesis of AlN layers by this combined method provides a significant decrease in the residual strain and suppresses the formation of cracks in the epilayer.

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ACKNOWLEDGMENTS

The authors are grateful to Quantum Silicon Co. (Moscow) for kindly providing AlN/Si(111) templates and to V.K. Smirnov for fruitful discussions.

Funding

The investigations of V.N. Bessolov, E.V. Konenkova, and V.N. Panteleev were supported in part by the Russian Foundation for Basic Research, project no. 20-08-00096.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin & M. P. Shcheglov

  2. Alferov St. Petersburg National Research Academic University (Alferov University), Russian Academy of Sciences, 194021, St. Petersburg, Russia

    N. D. Gruzinov

Authors
  1. V. N. Bessolov
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  2. N. D. Gruzinov
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  3. M. E. Kompan
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  4. E. V. Konenkova
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  5. V. N. Panteleev
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  6. S. N. Rodin
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  7. M. P. Shcheglov
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Corresponding author

Correspondence to V. N. Bessolov.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Bessolov, V.N., Gruzinov, N.D., Kompan, M.E. et al. Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering. Tech. Phys. Lett. 46, 382–384 (2020). https://doi.org/10.1134/S1063785020040185

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  • DOI: https://doi.org/10.1134/S1063785020040185

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