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Planar Capacitive Structures Based on Ferroelectric Barium Titanate–Stannate Films on Sapphire for Microwave Applications

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Abstract

The structural properties of ferroelectric barium titanate–stannate films on sapphire substrates and microwave characteristics of related planar capacitive elements have been investigated. The gas-medium composition during the film deposition has been established to affect significantly the crystal structure, phase composition, and electric characteristics of the films. The low dielectric loss and high controllability of planar capacitive elements based on barium titanate–stannate films in the frequency range of 2–60 GHz are demonstrated for the first time.

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Funding

This study was supported by the Russian Science Foundation (project no. 18-79-10156) and Ministry of Education and Science of the Russian Federation (state contract no. 3.3990.2017/4.6).

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Authors and Affiliations

  1. St. Petersburg Electrotechnical University LETI, 197376, St. Petersburg, Russia

    A. V. Tumarkin, M. V. Zlygostov, A. G. Gagarin, A. G. Altynnikov & E. N. Sapego

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  1. A. V. Tumarkin
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  2. M. V. Zlygostov
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  3. A. G. Gagarin
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  4. A. G. Altynnikov
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  5. E. N. Sapego
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Correspondence to A. V. Tumarkin.

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Translated by A. Sin’kov

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Tumarkin, A.V., Zlygostov, M.V., Gagarin, A.G. et al. Planar Capacitive Structures Based on Ferroelectric Barium Titanate–Stannate Films on Sapphire for Microwave Applications. Tech. Phys. Lett. 45, 639–642 (2019). https://doi.org/10.1134/S1063785019070137

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  • DOI: https://doi.org/10.1134/S1063785019070137

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