Abstracts
Ammonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors with a 1.2-mm periphery fabricated on substrates of both types exhibited similar high static characteristics: saturation current density above 0.75 A/mm, transconductance above 300 mS/mm, and breakdown voltage above 120 V. Measurements of the small-signal parameters showed that transistors based on silicon substrates possessed high gain in a frequency range up to 5 GHz; the specific output power at 1 GHz amounted to 5 W/mm for transistors on sapphire substrate and 2 W/mm for transistors on silicon substrate.
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Andreev, A., Grishchenko, Y.V., Ezubchenko, I.S. et al. Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates. Tech. Phys. Lett. 45, 173–175 (2019). https://doi.org/10.1134/S1063785019020238
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DOI: https://doi.org/10.1134/S1063785019020238