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Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

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Abstract

Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffer layers on the characteristics of heterostructures and test transistors based on them is studied. Powerful transistors were obtained with an output pulse power of 45 W at a frequency of 1 GHz with a supply voltage of 28 V. The maximum efficiency of the transistor was 55%.

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Funding

This work was supported by the Ministry of Science and  Higher  Education of the Russian Federation (agreement no. 05.604.21.0214, unique identifier RFMEFI60419X0214).

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Authors and Affiliations

  1. National Research Center Kurchatov Institute, 117556, Moscow, Russia

    Yu. V. Khrapovitskaya, M. Y. Chernykh, I. S. Ezubchenko, Yu. V. Grishchenko, I. O. Mayboroda, I. A. Chernykh, A. A. Andreev, P. A. Perminov & M. L. Zanaveskin

  2. JSC Research Institute of Electronics Engineering, Voronezh, Russia

    A. N. Tsotsorin, M. I. Chernykh & I. V. Semeykin

Authors
  1. Yu. V. Khrapovitskaya
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  2. M. Y. Chernykh
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  3. I. S. Ezubchenko
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  4. Yu. V. Grishchenko
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  5. I. O. Mayboroda
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  6. I. A. Chernykh
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  7. A. A. Andreev
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  8. P. A. Perminov
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  9. A. N. Tsotsorin
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  10. M. I. Chernykh
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  11. M. L. Zanaveskin
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  12. I. V. Semeykin
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Corresponding author

Correspondence to Yu. V. Khrapovitskaya.

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Khrapovitskaya, Y.V., Chernykh, M.Y., Ezubchenko, I.S. et al. Powerful Gallium Nitride Microwave Transistors on Silicon Substrates. Nanotechnol Russia 15, 169–174 (2020). https://doi.org/10.1134/S1995078020020123

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  • DOI: https://doi.org/10.1134/S1995078020020123

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