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Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

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Abstract

We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin & M. P. Shcheglov

  2. Quantum Silicon Company, Moscow, 115094, Russia

    D. S. Kibalov & V. K. Smirnov

Authors
  1. V. N. Bessolov
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  2. E. V. Konenkova
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  3. T. A. Orlova
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  4. S. N. Rodin
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  5. M. P. Shcheglov
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  6. D. S. Kibalov
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  7. V. K. Smirnov
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Corresponding author

Correspondence to V. N. Bessolov.

Additional information

Original Russian Text © V.N. Bessolov, E.V. Konenkova, T.A. Orlova, S.N. Rodin, M.P. Shcheglov, D.S. Kibalov, V.K. Smirnov, 2108, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 12, pp. 45–51.

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Bessolov, V.N., Konenkova, E.V., Orlova, T.A. et al. Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate. Tech. Phys. Lett. 44, 525–527 (2018). https://doi.org/10.1134/S1063785018060172

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  • DOI: https://doi.org/10.1134/S1063785018060172

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