Abstract
We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.
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Original Russian Text © V.N. Bessolov, E.V. Gushchina, E.V. Konenkova, T.V. L’vova, V.N. Panteleev, M.P. Shcheglov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 2, pp. 96–103.
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Bessolov, V.N., Gushchina, E.V., Konenkova, E.V. et al. Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate. Tech. Phys. Lett. 44, 81–83 (2018). https://doi.org/10.1134/S106378501801011X
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DOI: https://doi.org/10.1134/S106378501801011X