Abstract
Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH4)2S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.
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Bessolov, V.N., Gushchina, E.V., Konenkova, E.V. et al. Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy. Tech. Phys. 64, 531–534 (2019). https://doi.org/10.1134/S1063784219040054
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DOI: https://doi.org/10.1134/S1063784219040054