Abstract
The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).
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Original Russian Text © S.A. Blokhin, M.A. Bobrov, A.G. Kuz’menkov, A.A. Blokhin, A.P. Vasil’ev, Yu.A. Guseva, M.M. Kulagina, Yu.M. Zadiranov, N.A. Maleev, I.I. Novikov, L.Ya. Karachinsky, N.N. Ledentsov, V.M. Ustinov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 1, pp. 67–75.
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Blokhin, S.A., Bobrov, M.A., Kuz’menkov, A.G. et al. The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers. Tech. Phys. Lett. 44, 28–31 (2018). https://doi.org/10.1134/S1063785018010042
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DOI: https://doi.org/10.1134/S1063785018010042