Abstract
The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In0.74Ga0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.
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Original Russian Text © A.V. Babichev, L.Ya. Karachinskii, I.I. Novikov, A.G. Gladyshev, S.A. Blokhin, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J.P. Turkiewicz, K.O. Voropaev, A.S. Ionov, M. Agustin, N.N. Ledentsov, A.Yu. Egorov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 1, pp. 59–66.
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Babichev, A.V., Karachinskii, L.Y., Novikov, I.I. et al. Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion. Tech. Phys. Lett. 44, 24–27 (2018). https://doi.org/10.1134/S1063785018010029
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DOI: https://doi.org/10.1134/S1063785018010029