Abstract
Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies (f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate–drain voltage was determined. The influence of L g and the drain–source voltage on vinj has been studied.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. Quay, Gallium Nitride Electronics (Springer, Berlin, Heidelberg, 2008).
K. Shinohara, D. C. Regan, R. Yan Tang, et al., IEEE Trans. Electron Dev. 60, 2982 (2013).
D. S. Lee, Z. Liu, and T. Palacios, Jpn. J. Appl. Phys. 53, 100212 (2014).
Yu. V. Fedorov and S. V. Mikhailovich, Nano-Mikrosist. Tekh. 18 (4), 217 (2016).
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, and P. P. Maltsev, Semiconductors 50, 1416 (2016).
R. R. Galiev, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, Yu. V. Fedorov, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, and P. P. Maltsev, Bull. Russ. Acad. Sci.: Phys. 80, 476 (2016).
D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar, in Proceedings of the IEEE International Electron Devices Meeting IEDM, Dec. 7–9, 2009, Baltimore, MA (IEEE, 2010), p. 861.
S. V. Mikhailovich, Yu. V. Fedorov, A. S. Bugaev, et al., Dokl. TUSUR 2 (2, pt. 2), 31 (2011).
Yu. V. Fedorov and S. V. Mikhailovich, Nano-Mikrosist. Tekh., No. 10, 12 (2014).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.V. Mikhailovich, R.R. Galiev, A.V. Zuev, A.Yu. Pavlov, D.S. Ponomarev, R.A. Khabibullin, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 16, pp. 9–14.
Rights and permissions
About this article
Cite this article
Mikhailovich, S.V., Galiev, R.R., Zuev, A.V. et al. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel. Tech. Phys. Lett. 43, 733–735 (2017). https://doi.org/10.1134/S1063785017080235
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785017080235