Abstract
Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-solution layers in InGaAsP/InP heterostructures with indium content up to 80% can decrease the probability of spinodal decomposition of the solid solution, enhance its photoluminescence intensity, and increase the efficiency of laser-radiation conversion.
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Original Russian Text © A.E. Marichev, R.V. Levin, A.B. Gordeeva, G.S. Gagis, V.I. Kuchinskii, B.V. Pushnyi, N.D. Prasolov, N.M. Shmidt, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 2, pp. 3–9.
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Marichev, A.E., Levin, R.V., Gordeeva, A.B. et al. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters. Tech. Phys. Lett. 43, 88–91 (2017). https://doi.org/10.1134/S1063785017010230
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DOI: https://doi.org/10.1134/S1063785017010230