Skip to main content
Log in

Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-solution layers in InGaAsP/InP heterostructures with indium content up to 80% can decrease the probability of spinodal decomposition of the solid solution, enhance its photoluminescence intensity, and increase the efficiency of laser-radiation conversion.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. O. N. Krokhin, Phys. Usp. 49, 425 (2006).

    ADS  Google Scholar 

  2. J. Hecht, New Scientist 207, 25 (2010).

    Article  ADS  Google Scholar 

  3. www.lasermotive.com

  4. L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, and I. S. Tarasov, Semiconductors 34, 1255 (2000).

    Article  ADS  Google Scholar 

  5. R. Asomoza and V. A. Elyukhin, J. Cryst. Growth 222, 58 (2001).

    Article  ADS  Google Scholar 

  6. D. Schlenker and T. Miyamoto, Jpn. J. Appl. Phys. 39, 5751 (2000).

    Article  ADS  Google Scholar 

  7. K. Onabe, Jpn. J. Appl. Phys. 21, 797 (1982).

    Article  ADS  Google Scholar 

  8. A. E. Marichev, B. V. Pushnyi, and R. V. Levin, J. Phys.: Conf. Ser. 690, 012010 (2016).

    Google Scholar 

  9. R. V. Levin, A. E. Marichev, M. Z. Shvarts, E. P. Marukhina, V. P. Khvostikov, B. V. Pushnyi, M. N. Mizerov, and V. M. Andreev, Semiconductors 49, 700 (2015).

    Article  ADS  Google Scholar 

  10. R. Hull, J. Gray, C. C. Wu, et al., J. Phys.: Condens. Matter 14, 12829 (2002).

    ADS  Google Scholar 

  11. Ya. E. Geguzin, The Diffusion Zone (Nauka, Moscow, 1979) [in Russian].

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to N. M. Shmidt.

Additional information

Original Russian Text © A.E. Marichev, R.V. Levin, A.B. Gordeeva, G.S. Gagis, V.I. Kuchinskii, B.V. Pushnyi, N.D. Prasolov, N.M. Shmidt, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 2, pp. 3–9.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Marichev, A.E., Levin, R.V., Gordeeva, A.B. et al. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters. Tech. Phys. Lett. 43, 88–91 (2017). https://doi.org/10.1134/S1063785017010230

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785017010230

Navigation