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Dislocation-related photoluminescence in silicon implanted with fluorine ions

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Abstract

The implantation of 85-keV fluorine ions at a dose of 8.3 × 1014 cm–2 into single crystal Si does not lead to formation of an amorphous layer. Subsequent annealing at a temperature of 1100°C in a chlorine-containing atmosphere is accompanied by the appearance of D1 and D2 lines of dislocation-related luminescence. The intensity of both lines decreases as the annealing duration is increased from 0.25 to 3 h. As the measurement temperature is increased from 80 to 200 K, the intensities of these lines decrease and the positions of their peaks shift to longer wavelengths.

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References

  1. N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, JETP Lett. 23, 597 (1976).

    ADS  Google Scholar 

  2. N. A. Sobolev, Semiconductors 44, 1 (2010).

    Article  ADS  Google Scholar 

  3. N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek, K. F. Shtel’-makh, A. N. Mikhaylov, and D. I. Tetel’baum, Semiconductors 50, 240 (2016).

  4. S. Binetti, S. Pizzini, E. Leoni, et al., J. Appl. Phys. 92, 2437 (2002).

    Article  ADS  Google Scholar 

  5. R. Sauer, J. Weber, J. Stolz, et al., Appl. Phys. A 36, 1 (1985).

    Article  ADS  Google Scholar 

  6. N. A. Sobolev, A. M. Emel’yanov, E. I. Shek, et al., Phys. Status Solidi C 2, 1842 (2005).

    Article  ADS  Google Scholar 

  7. L. Xiang, D. Li, L. Jin, et al., J. Appl. Phys. 113, 033518 (2013).

    Article  ADS  Google Scholar 

  8. K. Bothe, R. J. Falster, and J. D. Murphy, Appl. Phys. Lett. 101, 032107 (2012).

    Article  ADS  Google Scholar 

  9. J. Michel, J. Palm, F. Gan, et al., Mater. Sci. Forum 196–201, 585 (1995).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek & K. V. Karabeshkin

  2. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

    P. A. Karasev & A. I. Titov

Authors
  1. N. A. Sobolev
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  2. A. E. Kalyadin
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  3. V. I. Sakharov
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  4. I. T. Serenkov
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  5. E. I. Shek
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  6. K. V. Karabeshkin
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  7. P. A. Karasev
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  8. A. I. Titov
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Corresponding author

Correspondence to N. A. Sobolev.

Additional information

Original Russian Text © N.A. Sobolev, A.E. Kalyadin, V.I. Sakharov, I.T. Serenkov, E.I. Shek, K.V. Karabeshkin, P.A. Karasev, A.I. Titov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 1, pp. 14–20.

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Sobolev, N.A., Kalyadin, A.E., Sakharov, V.I. et al. Dislocation-related photoluminescence in silicon implanted with fluorine ions. Tech. Phys. Lett. 43, 50–52 (2017). https://doi.org/10.1134/S1063785017010126

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  • DOI: https://doi.org/10.1134/S1063785017010126

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