Abstract
Photoluminescence is studied in silicon, deformed in a well-defined and reproducible way. Usual deformation conditions (high temperature, low stress) result in sharp spectra of the D1 through D4 lines as recently described in the literature. New lines D5 and D6 emerge for predeformation as above and subsequent low-temperature, high-stress deformation. Another new sharp line, D12, is observed when both the familiar and the novel lines appear simultaneously. Annealing for 1 h atT A≳ 300 °C causes all new lines to disappear and the D1–D4 spectra to reappear. Quantitative annealing and TEM micrographs suggest that D5 is related to straight dislocations and D6 to stacking faults, whereas D1–D4 are due to relaxed dislocations. Photoluminescence under uniaxial stress shows that D1/D2 originate in tetragonal defects with random orientation relative to 〈100〉 directions, whereas D6 stems from triclinic centers, preferentially oriented — as are the D3/D4 centers. We conclude that the D3/D4 and the D5 and D6 defects are closely related, whereas the independent D1/D2 centers might be deformation-produced point defects in the strain region of dislocations.
Similar content being viewed by others
References
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Pis'ma Zh. Eksp. Teor. Fiz.23, 651 (1976); Sov. Phys.JETP Lett.23, 597 (1976)
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. stat. sol. (b)83, K137 (1977)
R.H. Uebbing, P. Wagner, H. Baumgart, H.J. Queisser:Appl. Phys. Lett.37, 1078 (1980)
D. Gwinner, R. Labusch: Phys. stat. sol. (a)65, K99 (1981)
M. Suezawa, Y. Sasaki, Y. Nishina, K. Sumino: Jpn. J. Appl. Phys.20, L537 (1981)
M. Suezawa, K. Sumino, Y. Nishina: Jpn. J. Appl. Phys.21, L518 (1982)
M. Suezawa, K. Sumino: Phys. stat. sol. (a)78, 639 (1983)
M. Suezawa, K. Sumino: J. Phys. (Paris)44, C4–133 (1983) (Proc. Intern. Symp. Structure and Properties of Dislocations in Semiconductors, Aussois, France 1983)
M. Suezawa, Y. Sasaki, K. Sumino: Phys. stat. sol. (a)79, 173 (1983)
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. stat. sol. (a)64, K63 (1981)
Y.A. Osip'yan, A.M. Rtishchev, E.A. Shteinman, E.B. Yakimov, N.A. Yarykin: Zh. Eksp. Teor. Fiz.82, 509 (1982); Sov. Phys. JETP55, 294 (1982)
D. Gwinner, V.V. Kveder: Private communication
D. Gwinner: J. Phys. (Paris)44, C4–141 (1983)
H. Alexander, C. Kisielowski-Kemmerich, E.R. Weber: Physica116B, 583 (1983)(Proc. 12th Intern. Conf. Defects in Semiconductors, Amsterdam, The Netherlands, 1982)
R. Sauer, J. Weber:Lecture Notes in Physics 175, 120 (Springer, Berlin, Heidelberg, New York 1983) (Proc. Intern. School Defect Complexes in Semiconductor Structures, Matrafüred, Hungary 1982)
E.R. Weber, H. Alexander: J. Phys. (Paris)44, C4–319 (1983)
K. Wessel, H. Alexander: Philos. Mag.35, 1523 (1977)
See, for literature, J.C. Hensel, T.G. Phillips, G.A. Thomas:Solid State Physics 32, 87 (Academic Press, New York 1977)
T.M. Rice:Solid State Physics 32, 1 (Academic Press, New York 1977)
E. Weber, H. Alexander: Inst. Phys. Conf. Ser.31, 266 (1977)
Spectrum and sample history by courtesy of H. Conzelmann (private communication)
Sample and sample data from L.C. Kimerling (AT&T Bell Laboratories, USA)
Samples from D. Bäuerle (University of Linz, Austria); description of crystal growth in D. Bäuerle, P. Irsigler, G. Leyendecker, H. Noll, D. Wagner: Appl. Phys. Lett.40, 819 (1982)
K. Köhler, W. Appel, E. Bauser (Max-Planck-Institut für Festkörperforschung, Stuttgart) (private communication)
Same treatment as in [11 and 12]
Same treatment as in [25]
B. Pohoryles: Phys. stat. sol. (a)67, K75 (1981)
H. Alexander: InDislocations: Structure de coeur et propriétés physiques, ed. by P. Veyssière, L. Kubin, and J. Castaing, Editions de CNRS (1984) (in press)
H. Alexander, K. Wessel: J. Phys. (Paris)39, C2–114 (1978)
K.-H. Küsters: Unpublished work H. Gottschalk, 10th Intern. Congress Electr. Microsc. (Hamburg, 1982) p. 527
H. Teichler: J. Phys. (Paris)40, C6–43 (1979)
R. Sauer, J. Weber: Physica116B, 195 (1983)
See, for details, the discussion in K. Thonke, J. Weber, J. Wagner, R. Sauer: Physica116B, 252 (1983)
A.M. Stoneham:Theory of Defects in Solids (Clarendon Press, Oxford 1975)
A.E. Hughes, W.A. Runciman: Proc. Phys. Soc.90, 827 (1967)
A.A. Kaplyanskii: Opt. Spectrosc.16, 329 (1964)
A.A. Kaplyanskii: Opt. Spectrosc.16, 557 (1964)