Abstract
Temperature dependences of the photovoltaic characteristics of (p)a-Si/(i)a-Si:H/(n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80–420 K. The open-circuit voltage (V OC), fill factor (FF) of the current–voltage (I–U) characteristic, and maximum output power (P max) reach limiting values in the interval of 200–250 K on the background of monotonic growth in the short-circuit current (I SC) in a temperature range of 80–400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I–U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.
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Original Russian Text © A.V. Sachenko, Yu.V. Kryuchenko, V.P. Kostylyov, R.M. Korkishko, I.O. Sokolovskyi, A.S. Abramov, S.N. Abolmasov, D.A. Andronikov, A.V. Bobyl’, I.E. Panaiotti, E.I. Terukov, A.S. Titov, M.Z. Shvarts, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 6, pp. 70–76.
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Sachenko, A.V., Kryuchenko, Y.V., Kostylyov, V.P. et al. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells. Tech. Phys. Lett. 42, 313–316 (2016). https://doi.org/10.1134/S1063785016030305
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DOI: https://doi.org/10.1134/S1063785016030305