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Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures

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Abstract

Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal–insulator–semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov & A. P. Kasatkin

  2. Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    O. N. Gorshkov & I. N. Antonov

Authors
  1. S. V. Tikhov
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  2. O. N. Gorshkov
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  3. M. N. Koryazhkina
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  4. I. N. Antonov
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  5. A. P. Kasatkin
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Corresponding author

Correspondence to M. N. Koryazhkina.

Additional information

Original Russian Text © S.V. Tikhov, O.N. Gorshkov, M.N. Koryazhkina, I.N. Antonov, A.P. Kasatkin, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 3, pp. 52–60.

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Tikhov, S.V., Gorshkov, O.N., Koryazhkina, M.N. et al. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures. Tech. Phys. Lett. 42, 138–142 (2016). https://doi.org/10.1134/S1063785016020139

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  • DOI: https://doi.org/10.1134/S1063785016020139

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