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The effect of irradiation with H+ and Ne+ ions on resistive switching in metal–insulator–metal memristive structures based on SiO x

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Abstract

The effect of irradiation with H+ and Ne+ ions with an energy of 150 keV on memristive Au/SiO x /TiN/Ti structures, which were obtained by magnetron sputtering and exhibited a reproducible resistive switching effect, is studied. It is demonstrated that the low and high resistance states remain unchanged up to a dose of 1 × 1016 cm–2 in the case of irradiation with H+ ions and a dose of ~3 × 1015 cm–2 under irradiation with Ne+ ions. The obtained results demonstrate the high tolerance of parameters of the studied memristive structures to both ionizing radiation and displacement damage.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, E. V. Okulich, I. N. Antonov, A. P. Kasatkin, E. G. Gryaznov, O. N. Gorshkov & D. I. Tetelbaum

  2. Sedakov Research Institute for Measurement Systems, Nizhny Novgorod, 603950, Russia

    E. G. Gryaznov & A. P. Yatmanov

Authors
  1. A. I. Belov
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  2. A. N. Mikhaylov
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  3. D. S. Korolev
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  4. V. A. Sergeev
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  5. E. V. Okulich
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  6. I. N. Antonov
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  7. A. P. Kasatkin
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  8. E. G. Gryaznov
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  9. A. P. Yatmanov
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  10. O. N. Gorshkov
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  11. D. I. Tetelbaum
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Corresponding author

Correspondence to D. I. Tetelbaum.

Additional information

Original Russian Text © A.I. Belov, A.N. Mikhaylov, D.S. Korolev, V.A. Sergeev, E.V. Okulich, I.N. Antonov, A.P. Kasatkin, E.G. Gryaznov, A.P. Yatmanov, O.N. Gorshkov, D.I. Tetelbaum, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 19, pp. 81–89.

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Belov, A.I., Mikhaylov, A.N., Korolev, D.S. et al. The effect of irradiation with H+ and Ne+ ions on resistive switching in metal–insulator–metal memristive structures based on SiO x . Tech. Phys. Lett. 41, 957–960 (2015). https://doi.org/10.1134/S106378501510003X

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  • DOI: https://doi.org/10.1134/S106378501510003X

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