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MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells

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Abstract

We present the results of optimization of the design and molecular beam epitaxy (MBE) growth technology of N-AlGaAs:Si/n +-GaAs:Si/p +-GaAs:Be/P-AlGaAs:Be heterostructures for tunnel diodes (TDs). The achieved maximum peak current density level (J p = 513 A/cm2) allows these TDs to be used for cascade connections both in multijunction solar cells and in structures of tunnel-coupled laser diodes. The initial region of the J–U curve of TDs exhibits nonlinearity that is explained by a residual potential barrier left in the p +–P–p + isotype heterojunction (confining the active region of TD) as a result of non-optimum doping of Al0.4Ga0.6As alloy.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. V. Klimko, T. A. Komissarova, S. V. Sorokin, E. V. Kontrosh, N. M. Lebedeva, A. A. Usikova, N. D. Il’inskaya, V. S. Kalinovskii & S. V. Ivanov

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  1. G. V. Klimko
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  2. T. A. Komissarova
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  3. S. V. Sorokin
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  4. E. V. Kontrosh
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  5. N. M. Lebedeva
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  6. A. A. Usikova
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  7. N. D. Il’inskaya
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  8. V. S. Kalinovskii
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  9. S. V. Ivanov
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Correspondence to G. V. Klimko.

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Original Russian Text © G.V. Klimko, T.A. Komissarova, S.V. Sorokin, E.V. Kontrosh, N.M. Lebedeva, A.A. Usikova, N.D. Il’inskaya, V.S. Kalinovskii, S.V. Ivanov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 18, pp. 82–88.

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Klimko, G.V., Komissarova, T.A., Sorokin, S.V. et al. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells. Tech. Phys. Lett. 41, 905–908 (2015). https://doi.org/10.1134/S1063785015090229

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  • DOI: https://doi.org/10.1134/S1063785015090229

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