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High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation

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Abstract

Hexagonal single-crystalline indium nitride (InN) films on (0001)-oriented sapphire (Al2O3) and (111)-oriented fianite (yttria-stabilized zirconia, YSZ) substrates and on (0001)-oriented GaN/Al2O3 templates have been grown at a record high rate of 10 μm/h by the method of metalorganic vapor phase epitaxy with nitrogen activation in plasma of electron cyclotron resonance discharge generated by gyrotron radiation. It is established that the use of fianite substrates significantly improves the structural perfection and photoluminescent properties of InN films as compared to those grown on sapphire and templates. Undoped InN films exhibit n-type conductivity with electron concentrations within n = 8.0 × 1019–4.9 × 1020 cm−3 and room-temperature mobilities up to 180 cm2/(V s).

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    Yu. N. Buzynin, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk’yanov, O. I. Khrykin, V. I. Shashkin & P. A. Yunin

  2. Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    A. V. Vodop’yanov, S. V. Golubev & D. A. Mansfeld

  3. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    Yu. N. Buzynin, M. N. Drozdov, Yu. N. Drozdov, V. I. Shashkin & P. A. Yunin

Authors
  1. Yu. N. Buzynin
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  2. A. V. Vodop’yanov
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  3. S. V. Golubev
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  4. M. N. Drozdov
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  5. Yu. N. Drozdov
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  6. A. Yu. Luk’yanov
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  7. D. A. Mansfeld
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  8. O. I. Khrykin
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  9. V. I. Shashkin
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  10. P. A. Yunin
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Correspondence to Yu. N. Buzynin.

Additional information

Original Russian Text © Yu.N. Buzynin, A.V. Vodop’yanov, S.V. Golubev, M. N. Drozdov, Yu.N. Drozdov, A.Yu. Luk’yanov, D.A. Mansfeld, O.I. Khrykin, V.I. Shashkin, P.A. Yunin, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 6, pp. 17–25.

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Buzynin, Y.N., Vodop’yanov, A.V., Golubev, S.V. et al. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation. Tech. Phys. Lett. 41, 266–269 (2015). https://doi.org/10.1134/S1063785015030189

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  • DOI: https://doi.org/10.1134/S1063785015030189

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