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Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

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Abstract

A comparative study of the electrical and optical characteristics of laser diodes based on GaAs and In0.01Ga0.99As structures with quantum wells grown on Ge substrates has been performed. It is established that lasers based on In0.01Ga0.99As structure are more perfect and exhibit characteristics comparable with those of lasers based on GaAs.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin, A. A. Dubinov & Z. F. Krasilnik

  2. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin, A. A. Dubinov & Z. F. Krasilnik

  3. Physicotechnical Research Institute, Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    N. V. Dikareva, B. N. Zvonkov & S. M. Nekorkin

Authors
  1. V. Ya. Aleshkin
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  2. N. V. Dikareva
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  3. A. A. Dubinov
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  4. B. N. Zvonkov
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  5. Z. F. Krasilnik
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  6. S. M. Nekorkin
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Corresponding author

Correspondence to A. A. Dubinov.

Additional information

Original Russian Text © V.Ya. Aleshkin, N.V. Dikareva, A.A. Dubinov, B.N. Zvonkov, Z.F. Krasilnik, S.M. Nekorkin, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 6, pp. 105–110.

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Aleshkin, V.Y., Dikareva, N.V., Dubinov, A.A. et al. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates. Tech. Phys. Lett. 41, 304–306 (2015). https://doi.org/10.1134/S1063785015030177

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  • DOI: https://doi.org/10.1134/S1063785015030177

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