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MOVPE of III-N LED structures with short technological process

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Abstract

The paper presents results on optimizing the MOVPE technology of light-emitting diode (LED) structures in a Dragon-125 system to accelerate the technological cycle. Due to the high growth rate of GaN layers and optimization of the initial GaN growth phase, the total duration of the epitaxial process is reduced from 4 h 45 min to 2 h 44 min. The LED diode structures grown by this technique compare well in quality with LEDs grown by the standard method in the commercially available AIX2000HT system.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    W. V. Lundin, D. V. Davydov, E. E. Zavarin, A. V. Sakharov, A. F. Tsatsulnikov & V. M. Ustinov

  2. Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia

    W. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popov, A. V. Sakharov, A. F. Tsatsulnikov & M. N. Mizerov

  3. Soft-Impact Ltd., St. Petersburg, 194021, Russia

    E. V. Yakovlev, D. S. Bazarevskii & R. A. Talalaev

Authors
  1. W. V. Lundin
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  2. D. V. Davydov
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  3. E. E. Zavarin
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  4. M. G. Popov
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  5. A. V. Sakharov
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  6. E. V. Yakovlev
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  7. D. S. Bazarevskii
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  8. R. A. Talalaev
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  9. A. F. Tsatsulnikov
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  10. M. N. Mizerov
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  11. V. M. Ustinov
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Corresponding author

Correspondence to W. V. Lundin.

Additional information

Original Russian Text © W.V. Lundin, D.V. Davydov, E.E. Zavarin, M.G. Popov, A.V. Sakharov, E.V. Yakovlev, D.S. Bazarevskii, R.A. Talalaev, A.F. Tsatsulnikov, M.N. Mizerov, V.M. Ustinov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 5, pp. 9–17.

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Lundin, W.V., Davydov, D.V., Zavarin, E.E. et al. MOVPE of III-N LED structures with short technological process. Tech. Phys. Lett. 41, 213–216 (2015). https://doi.org/10.1134/S1063785015030116

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  • DOI: https://doi.org/10.1134/S1063785015030116

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