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The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs0.84Sb0.16/AlSb heterostructures with deep quantum wells

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Abstract

The optical characteristics of heterostructures with deep quantum wells have been studied by the example of the AlSb/InAs0.84Sb0.16/AlSb system with allowance for a non-parabolic energy spectrum of charge carriers in the framework of the four-band Kane model. It is established that the nonparabolicity weakly influences the overlap integral between s and p states, but leads to a significant increase in the density of states in the conduction band and, in turn, to a considerable growth in the optical absorption coefficient.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. V. Pavlov & G. G. Zegrya

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  1. N. V. Pavlov
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  2. G. G. Zegrya
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Correspondence to N. V. Pavlov.

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Original Russian Text © N.V. Pavlov, G.G. Zegrya, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 20, pp. 1–8.

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Pavlov, N.V., Zegrya, G.G. The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs0.84Sb0.16/AlSb heterostructures with deep quantum wells. Tech. Phys. Lett. 40, 883–886 (2014). https://doi.org/10.1134/S1063785014100277

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  • DOI: https://doi.org/10.1134/S1063785014100277

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