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Scattering of Charge Carriers by Impurity Ions in InAs/AlSb Heterostructure

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Russian Physics Journal Aims and scope

The mechanism of charge carrier scattering on ionized impurity atoms in an InAs/AlSb heterostructure with two filled size quantization subbands is studied. The purpose of the article is to develop a theory that fully describes quantum-mechanical processes in the structure under study. The calculation performed within the framework of the proposed transport time algorithm showed that the developed theory describes with high accuracy the mechanism of scattering of two-dimensional carriers by donor impurity ions in an active InAs layer. It was established that the lifetime limiting the mobility of two-dimensional carriers upon scattering by impurity ions is of the order of 10–12 s.

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References

  1. E. R. Burmistrov, Superconducting and Electronic Properties of Solids, Thesis. Docl. of Int. Conf. of Students, Graduate Students, and Young Scientists “Lomonosov 2019”, Lomonosov Moscow State University, Moscow (2019).

  2. M. M. Afanasova, Electronics: Collected Papers [in Russian], RSRTU, Ryazan (2006).

    Google Scholar 

  3. T. Ando, A. B. Fowler, and F. Stern, Electronic Properties of Two-Dimensional Systems [Russian translation], Mir, Moscow (1985).

    Google Scholar 

  4. L. D. Landau and E. M. Lifshits, Quantum Mechanics. Non-relativistic Theory [in Russian], Nauka, Moscow (1963).

  5. E. R. Burmistrov, Thesis. Docl. of All-Russian Scientific Conf. “Actual Problems of Physics and Technology in Education, Science, and Production”, Ryazan (2019).

  6. B. M. Askerov, Electron Transport Phenomena in Semiconductors [in Russian], Nauka, Moscow (1985).

    Google Scholar 

  7. M. M. Afanasova and V. A. Stepanov, Nanosist.: Fiz., Khim., Mat., 3, No. 6, 36–46 (2012).

  8. E. H. Hwang and S. Das Sarma, Phys. Rev. B, 77, 235437 (2008).

    Article  ADS  Google Scholar 

  9. F. Stern and W. Howard, Phys. Rev., 163, 816–835 (1967).

    Article  ADS  Google Scholar 

  10. D. Yu. Protasov, A. K. Bakarov, and A. I. Toropov, Fiz. Tekh. Poluprovodn., 52, No. 1, 48–57 (2018).

    Google Scholar 

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Authors and Affiliations

  1. Ryazan State University named for S. A. Yesenin, Ryazan, Russia

    E. R. Burmistrov & M. M. Afanasova

Authors
  1. E. R. Burmistrov
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  2. M. M. Afanasova
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Correspondence to E. R. Burmistrov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 88–96, March, 2020.

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Burmistrov, E.R., Afanasova, M.M. Scattering of Charge Carriers by Impurity Ions in InAs/AlSb Heterostructure. Russ Phys J 63, 446–456 (2020). https://doi.org/10.1007/s11182-020-02055-x

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  • DOI: https://doi.org/10.1007/s11182-020-02055-x

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