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Developing an approach based on the formation of YBa2Cu3O x -interlayer-YBa2Cu3O x epitaxial structures with high current-carrying ability

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Abstract

An approach based on the formation of YBa2Cu3O x -interlayer-YBa2Cu3O x multilayer epitaxial structures with high current-carrying ability is proposed. The use of interlayers representing simple cubic oxides (SrTiO3 and CeO2) allows the growth of crystal defects during the formation of a high-temperature superconductor (HTS) layer to be stopped. The phenomenon of current transfer through 10- to 50-nm-thick interlayers has been discovered. Using the proposed approach, it is possible to increase the current-carrying ability in proportion to the number of HTS layers in the structure. This in principle solves the problem of critical current-density degradation with increasing thickness of YBa2Cu3O x layer.

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Authors and Affiliations

  1. Russian Research Centre Kurchatov Institute, Moscow, 123182, Russia

    M. Ya. Garaeva, I. A. Chernykh, T. S. Krylova, R. I. Shainurov, E. P. Krasnoperov & M. L. Zanaveskin

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  1. M. Ya. Garaeva
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  2. I. A. Chernykh
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  3. T. S. Krylova
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  4. R. I. Shainurov
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  5. E. P. Krasnoperov
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  6. M. L. Zanaveskin
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Correspondence to I. A. Chernykh.

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Original Russian Text © M.Ya. Garaeva, I.A. Chernykh, T.S. Krylova, R.I. Shainurov, E.P. Krasnoperov, M.L. Zanaveskin, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 20, pp. 47–53.

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Garaeva, M.Y., Chernykh, I.A., Krylova, T.S. et al. Developing an approach based on the formation of YBa2Cu3O x -interlayer-YBa2Cu3O x epitaxial structures with high current-carrying ability. Tech. Phys. Lett. 40, 905–908 (2014). https://doi.org/10.1134/S1063785014100204

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  • DOI: https://doi.org/10.1134/S1063785014100204

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