Abstract
The impurity-defect structure of heteroepitaxial Cd x Hg1 − x Te/Si (0.35 < x < 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted p +-n junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of p +-on-n photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy ∼10 meV) and deep (∼50 meV) acceptor levels.
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Original Russian Text © K.D. Mynbaev, N.L. Bazhenov, M.V. Yakushev, D.V. Marin, V.S. Varavin, Yu.G. Sidorov, S.A. Dvoretsky, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 16, pp. 65–72.
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Mynbaev, K.D., Bazhenov, N.L., Yakushev, M.V. et al. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p +-n photodiode structure formation. Tech. Phys. Lett. 40, 708–711 (2014). https://doi.org/10.1134/S1063785014080239
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DOI: https://doi.org/10.1134/S1063785014080239