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The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching

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Abstract

The stability of titanium oxide memristors with gold and platinum electrodes with respect to switching-induced degradation has been studied. It is established that the use of gold instead of platinum as the electrode material significantly increases the resistance of a memristor to degradation in the course of repeated resistance read-write(erase) cycles. The first Russian high-endurance memristor based on titanium oxide has been obtained, which can withstand up to 3000 resistive switching cycles.

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Authors and Affiliations

  1. Russian Research Centre Kurchatov Institute, Moscow, 123182, Russia

    Yu. V. Khrapovitskaya, N. E. Maslova, Yu. V. Grishchenko, V. A. Demin & M. L. Zanaveskin

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  1. Yu. V. Khrapovitskaya
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  2. N. E. Maslova
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  3. Yu. V. Grishchenko
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  4. V. A. Demin
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  5. M. L. Zanaveskin
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Correspondence to Yu. V. Khrapovitskaya.

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Original Russian Text © Yu.V. Khrapovitskaya, N.E. Maslova, Yu.V. Grishchenko, V.A. Demin, M.L. Zanaveskin, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 7, pp. 87–94.

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Khrapovitskaya, Y.V., Maslova, N.E., Grishchenko, Y.V. et al. The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching. Tech. Phys. Lett. 40, 317–319 (2014). https://doi.org/10.1134/S1063785014040051

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  • DOI: https://doi.org/10.1134/S1063785014040051

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