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Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions

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Abstract

Photosensitive anisotype n-TiN/p-Hg3In2Te6 heterojunctions have been obtained by reactive magnetron sputtering of thin n-type titanium nitride (TiN) films onto single-crystalline plates of p-type Hg3In2Te6. It is established that the obtained heterostructures generate an open-circuit voltage of V oc = 0.52 V and a short-circuit current density of I sc = 0.265 mA/cm2 with a filling factor of FF = 0.39 under illumination at a power density of 80 mW/cm2.

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Authors and Affiliations

  1. Yuriy Fedkovych Chernivtsi National University, 58012, Chernivtsi, Ukraine

    M. M. Solovan, E. V. Maistruk, V. V. Brus & P. D. Maryanchuk

Authors
  1. M. M. Solovan
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  2. E. V. Maistruk
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  3. V. V. Brus
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  4. P. D. Maryanchuk
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Correspondence to M. M. Solovan.

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Original Russian Text © M.M. Solovan, E.V. Maistruk, V.V. Brus, P.D. Maryanchuk, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 6, pp. 1–6.

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Solovan, M.M., Maistruk, E.V., Brus, V.V. et al. Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions. Tech. Phys. Lett. 40, 231–233 (2014). https://doi.org/10.1134/S1063785014030274

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  • DOI: https://doi.org/10.1134/S1063785014030274

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