Abstract
A method for overgrowing laser stripe structures with high-ohmic indium phosphide to bound the domain of current flow and to improve heat dissipation is presented. Overgrowing was performed using metal-organic chemical-vapor deposition. It is shown that the method makes it possible to obtain high-quality epitaxial layers and defectless overgrowth boundaries without special processing of the structures after photolithography. All the InP layers were n-conductive, the specific resistance was ρ ∼ 5 × 104 Ω cm, and the carrier concentration was n ∼ 5 × 1010 cm−3. The characteristics of the grown InP layers permit one to obtain high-quality quantum-cascade lasers.
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References
J. Faist, F. Capasso, D. L. Sivco, et al., Science 264, 553 (1994).
A. Evans, S. R. Darvish, S. Slivken, et al., Appl. Phys. Lett. 91, 071101 (2007).
M. Chashnikova, G. Monastyrskyi, A. Aleksandrova, et al., Appl. Phys. Lett. 100, 213504 (2012).
V. V. Mamutin, V. M. Ustinov, J. Boetthcher, and H. Kuenzel, Semiconductors 44, 962 (2010).
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Original Russian Text © V.V. Mamutin, N.D. Il’inskaya, B.V. Pushnyi, R.N. Levin, Yu.M. Shernyakov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 32–37.
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Mamutin, V.V., Il’inskaya, N.D., Pushnyi, B.V. et al. Preparation of a strip structure for quantum-cascade lasers. Tech. Phys. Lett. 39, 811–813 (2013). https://doi.org/10.1134/S1063785013090198
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DOI: https://doi.org/10.1134/S1063785013090198