Abstract
The process of chemical-energy transformation into electricity is studied on the surface of a semiconductor structure (SiC-based nanosized p-n junctions). The energy transformation occurs due to the interaction of hydrogen and oxygen atoms, as well as mixtures of H + O and CH3 + H with the surface and subsequent separation of the electron-hole pairs by the electric field of the p-n junction. The top p-layer of a SiC-based structure has a thickness of about 30 nm. It is shown that, in an open circuit, the chemo emf has reached 3 mV and the short circuit chemicurrent 320 nA.
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Original Russian Text © V.V. Styrov, S.V. Simchenko, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 13, pp. 85–94.
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Styrov, V.V., Simchenko, S.V. SiC-based nanosized structures with p-n junctions for transforming chemical energy into electricity and sensors. Tech. Phys. Lett. 39, 621–625 (2013). https://doi.org/10.1134/S1063785013070122
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DOI: https://doi.org/10.1134/S1063785013070122