Abstract
A new nanocomposite material with stable properties has been obtained representing a metal (indium) incorporated into a semiconducting porous silicon (por-Si) matrix. Electrical properties of the por-Si-In nanocomposite have been studied for the first time. At low temperatures (T = 1.4–4.2 K), the por-Si-In samples exhibit a positive magnetoresistance [ΔR/R(H = 0) ≈ 600%], which is related to breakage of the superconducting state of In particles in the por-Si matrix.
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Original Russian Text © L.M. Sorokin, A.V. Fokin, A.E. Kalmykov, A.V. Chernyaev, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 17, pp. 24–30.
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Sorokin, L.M., Fokin, A.V., Kalmykov, A.E. et al. Low-temperature properties of porous silicon-indium nanocomposite. Tech. Phys. Lett. 38, 789–792 (2012). https://doi.org/10.1134/S106378501209012X
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DOI: https://doi.org/10.1134/S106378501209012X