Abstract
Epitaxial gallium nitride (GaN) structures have been manufactured by the lateral overgrowth technology, whereby GaN epilayers are grown in stripe windows on a partly masked initial GaN layer. It is established that in addition to the traditional orientation of stripes across the c axis, the process is also possible for the stripes oriented at 45° relative to this axis. In this case, two lateral overgrowth processes in mutually perpendicular directions can be performed, which would significantly reduce the relative area of imperfect material formed over windows in the mask.
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Original Russian Text © W.V. Lundin, E.E. Zavarin, M.M. Rozhavskaya, A.E. Nikolaev, A.V. Sakharov, S.I. Troshkov, M.A. Sinitsyn, D.V. Davydov, M.M. Kulagina, P.N. Brunkov, A.F. Tsatsulnikov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 6, pp. 22–28.
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Lundin, W.V., Zavarin, E.E., Rozhavskaya, M.M. et al. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers. Tech. Phys. Lett. 38, 265–267 (2012). https://doi.org/10.1134/S1063785012030285
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DOI: https://doi.org/10.1134/S1063785012030285