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Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er3+ and Yb3+ ions

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Abstract

It is shown that the ion implantation of phosphorus into thin amorphous films of germanium dioxide doped with Er3+ and Yb3+ ions can be used for enhancing luminescence from Er3+ ions at ∼1.53 μm.

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Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, Russia

    I. N. Antonov, O. N. Gorshkov, A. N. Shushunov, A. P. Kasatkin, A. Yu. Dudin & M. E. Shenina

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  1. I. N. Antonov
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  2. O. N. Gorshkov
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  3. A. N. Shushunov
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  4. A. P. Kasatkin
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  5. A. Yu. Dudin
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  6. M. E. Shenina
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Correspondence to I. N. Antonov.

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Original Russian Text © I.N. Antonov, O.N. Gorshkov, A.N. Shushunov, A.P. Kasatkin, A.Yu. Dudin, M.E. Shenina, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 5, pp. 71–77.

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Antonov, I.N., Gorshkov, O.N., Shushunov, A.N. et al. Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er3+ and Yb3+ ions. Tech. Phys. Lett. 38, 235–237 (2012). https://doi.org/10.1134/S1063785012030029

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  • DOI: https://doi.org/10.1134/S1063785012030029

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