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Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

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Abstract

It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illumination, and the external electric and magnetic fields.

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Authors and Affiliations

  1. Tashkent State Technical University, Tashkent, Uzbekistan

    M. K. Bakhadyrkhanov, K. S. Ayupov, Kh. M. Iliev, G. Kh. Mavlonov & O. É. Sattorov

Authors
  1. M. K. Bakhadyrkhanov
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  2. K. S. Ayupov
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  3. Kh. M. Iliev
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  4. G. Kh. Mavlonov
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  5. O. É. Sattorov
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Corresponding author

Correspondence to G. Kh. Mavlonov.

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Original Russian Text © M.K. Bakhadyrkhanov, K.S. Ayupov, Kh.M. Iliev, G.Kh. Mavlonov, O.É. Sattorov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 16, pp. 11–18.

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Bakhadyrkhanov, M.K., Ayupov, K.S., Iliev, K.M. et al. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon. Tech. Phys. Lett. 36, 741–744 (2010). https://doi.org/10.1134/S1063785010080195

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  • DOI: https://doi.org/10.1134/S1063785010080195

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