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Specific features of magnetoresistance in overcompensated manganese-doped silicon

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Abstract

It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = E C − 0.35 eV ÷ E C − 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.

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Authors and Affiliations

  1. Tashkent State Technical University, Tashkent, 100095, Uzbekistan

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev, K. S. Ayupov, O. E. Sattarov & C. A. Tachilin

Authors
  1. M. K. Bakhadirkhanov
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  2. G. H. Mavlonov
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  3. X. M. Iliev
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  4. K. S. Ayupov
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  5. O. E. Sattarov
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  6. C. A. Tachilin
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Corresponding author

Correspondence to G. H. Mavlonov.

Additional information

Original Russian Text © M.K. Bakhadirkhanov, G.H. Mavlonov, X.M. Iliev, K.S. Ayupov, O.E. Sattarov, C.A. Tachilin, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1014–1016.

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Bakhadirkhanov, M.K., Mavlonov, G.H., Iliev, X.M. et al. Specific features of magnetoresistance in overcompensated manganese-doped silicon. Semiconductors 48, 986–988 (2014). https://doi.org/10.1134/S106378261408003X

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  • DOI: https://doi.org/10.1134/S106378261408003X

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