Abstract
Epitaxial films of cubic silicon carbide (n-3C-SiC) polytype grown on hexagonal (6H-SiC) polytype substrates by sublimation epitaxy in vacuum have been studied. The films of the best structural quality exhibit low-temperature photoluminescence related to the recombination of bound excitons. The results are compared to the available data for volume 3C-SiC crystals.
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Original Russian Text © A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel’son, B.S. Razbirin, A.S. Tregubova, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 11, pp. 32–36.
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Lebedev, A.A., Abramov, P.L., Bogdanova, E.V. et al. Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates. Tech. Phys. Lett. 36, 504–506 (2010). https://doi.org/10.1134/S1063785010060052
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DOI: https://doi.org/10.1134/S1063785010060052