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A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC

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Abstract

Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal perfection than do 3C-SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3C-SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3C-SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Lebedev, I. P. Nikitina, N. V. Seredova, N. K. Poletaev & S. P. Lebedev

  2. St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia

    A. A. Lebedev

  3. Peter the Great St. Petersburg Polytechnic University, 195021, St. Petersburg, Russia

    V. V. Kozlovski

  4. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University), 197101, St. Petersburg, Russia

    A. V. Zubov

Authors
  1. A. A. Lebedev
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  2. I. P. Nikitina
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  3. N. V. Seredova
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  4. N. K. Poletaev
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  5. S. P. Lebedev
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  6. V. V. Kozlovski
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  7. A. V. Zubov
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Correspondence to A. A. Lebedev.

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Translated by M. Tagirdzhanov

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Lebedev, A.A., Nikitina, I.P., Seredova, N.V. et al. A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC. Tech. Phys. Lett. 45, 557–559 (2019). https://doi.org/10.1134/S1063785019060117

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  • DOI: https://doi.org/10.1134/S1063785019060117

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