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Spectroscopic investigations of the stability of porous silicon structure obtained by etching Si(100) in aqueous ammonium fluoride solution

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Abstract

The structure of porous silicon (por-Si) obtained by electrochemical etching of Si(100) single crystal wafers in an aqueous ammonium fluoride solution with isopropyl alcohol additions has been studied using X-ray reflection spectroscopy, X-ray photoelectron spectroscopy, and external X-ray quantum yield measurements. It is established that por-Si layers obtained by the nontraditional technology (not involving hydrofluoric acid) possess a partly amorphized structure and bear a stable surface oxide film with a thickness not exceeding 5 nm.

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Authors and Affiliations

  1. Institute of Physics, St. Petersburg State University, St. Petersburg, 198904, Russia

    E. O. Filatova, K. M. Lysenkov, A. A. Sokolov, A. A. Ovchinnikov, D. E. Marchenko, V. M. Kashkarov & I. V. Nazarikov

  2. BESSY II, D-12489, Berlin-Adlershof, Germany

    E. O. Filatova, K. M. Lysenkov, A. A. Sokolov, A. A. Ovchinnikov, D. E. Marchenko, V. M. Kashkarov & I. V. Nazarikov

  3. Voronezh State University, Voronezh, 394006, Russia

    E. O. Filatova, K. M. Lysenkov, A. A. Sokolov, A. A. Ovchinnikov, D. E. Marchenko, V. M. Kashkarov & I. V. Nazarikov

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  1. E. O. Filatova
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  2. K. M. Lysenkov
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  3. A. A. Sokolov
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  4. A. A. Ovchinnikov
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  5. D. E. Marchenko
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  6. V. M. Kashkarov
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  7. I. V. Nazarikov
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Correspondence to E. O. Filatova.

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Original Russian Text © E.O. Filatova, K.M. Lysenkov, A.A. Sokolov, A.A. Ovchinnikov, D.E. Marchenko, V.M. Kashkarov, I.V. Nazarikov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 3, pp. 53–59.

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Filatova, E.O., Lysenkov, K.M., Sokolov, A.A. et al. Spectroscopic investigations of the stability of porous silicon structure obtained by etching Si(100) in aqueous ammonium fluoride solution. Tech. Phys. Lett. 36, 119–121 (2010). https://doi.org/10.1134/S1063785010020082

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  • DOI: https://doi.org/10.1134/S1063785010020082

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