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Edge luminescence of single-crystal silicon modulated by voltage variation on the p-n junction

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Abstract

The output power and quantum efficiency of the room-temperature quasi-stationary edge photoluminescence (PL) in a single-crystal silicon structure cut from a high-efficiency solar cell have been studied as functions of the power of exciting laser radiation with a wavelength of 658 nm at variable direct current and reverse-bias voltage on the p-n junction. It was found that the direct current passage led to a significant increase in the output power and quantum efficiency of the quasi-stationary PL and a decrease in the threshold power of PL excitation. The application of a reverse bias voltage produced the opposite effects. Possible physical factors responsible for these phenomena are considered.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. M. Emel’yanov

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  1. A. M. Emel’yanov
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Correspondence to A. M. Emel’yanov.

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Original Russian Text © A.M. Emel’yanov, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 18, pp. 80–86.

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Emel’yanov, A.M. Edge luminescence of single-crystal silicon modulated by voltage variation on the p-n junction. Tech. Phys. Lett. 35, 873–875 (2009). https://doi.org/10.1134/S1063785009090259

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  • DOI: https://doi.org/10.1134/S1063785009090259

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