Abstract
The effect of a high-frequency (f = 5 MHz) ultrasonic treatment (UST) on the low-temperature (T = 77 K) electrical properties of smooth InAs p-n junctions has been studied. It is established that the most UST-sensitive parameter is the tunneling current component, which is probably related to the channels of increased conductivity localized near dislocations. The current component determined by the recombination of carriers in the space charge region free of dislocations is less sensitive. The electrical characteristics of p-n junctions exhibit a tendency to restoration during the long-term storage of treated samples under laboratory conditions. Possible models of the influence of UST on the electrical properties of smooth InAs p-n junctions are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. P. Zdebskii, M. I. Lisyanskii, N. B. Luk’yanchenko, et al., Pis’ma Zh. Tekh. Fiz. 13(16), 1009 (1987) [Tech. Phys. Lett. 13, 421 (1987)].
I. B. Ermolovich, V. V. Milenin, R. V. Konakova, et al., Fiz. Tekh. Polyprovod. (St. Petersburg) 31, 503 (1997) [Semiconductors 31, 427 (1997)].
E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova, et al., Pis’ma Zh. Tekh. Fiz. 31(1), 54 (2005) [Tech. Phys. Lett. 31, 27 (2005)].
O. Ya. Olikh and T. N. Pinchuk, Pis’ma Zh. Tekh. Fiz. 32(12), 22 (2006) [Tech. Phys. Lett. 32, 517 (2006)].
N. A. Guseinov, Ya. M. Olikh, and Sh. G. Askerov, Pis’ma Zh. Tekh. Fiz. 333(1), 38 (2007) [Tech. Phys. Lett. 33, 18 (2007)].
A. Granato and K Lukke, in Physical Acoustics, Ed. by W. Mesen (Mir Moscow, 1969), Vol. 4, Part A [in Russian].
I. V. Ostrovskii, Sonoluminesce and Crystal Defects (Vyssha Shkola, Kiev, 1993), pp. 174–202 [in Russian].
P. I. Baranskii, A. E. Belyaev, and S. M. Komirenko, Fiz. Tverd. Tela (Leningrad) 31(9), 278 (1989) [Sov. Phys. Solid State 31 (9), 1636 (1989)].
O. Ya. Olikh and I. V. Ostrovskii, Fiz. Tverd. Tela (St. Petersburg) 44, 1198 (2002) [Phys. Solid State 44, 1249 (2002)].
A. V. Sukach, G. S. Oleinik, V. V. Teterkin, et al., in Optoelectronics and Semiconductor Technology (Naukova Dumka, Kiev, 2005), Issue 40, pp. 248–257 [in Russian].
A. Sukach, V. Tetyorkin, G. Olijnik, et al., Proc. SPIE 5957, 212 (2005).
A. S. Bruk, A. V. Govorkov, L. I. Kolesnik, et al., Fiz. Tekh. Polyprovod. (Leningrad) 16, 1510 (1982) [Sov. Phys. Semicond. 16, 966 (1982)].
L. S. Berman, Capasitive Techniques for Studying Semiconductors (Nauka, Leningrad, 1972) [in Russian].
O. V. Konstantinov and O. A. Mezrin, Fiz. Tekh. Polyprovod. (Leningrad) 17, 305 (1983) [Sov. Phys. Semicond. 17, 193 (1983)].
J. Friedel, Dislocations (Pergamon Press, Oxford, 1964; Mir, Moscow, 1967).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Sukach, V.V. Teterkin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 11, pp. 67–75.
Rights and permissions
About this article
Cite this article
Sukach, A.V., Teterkin, V.V. Ultrasonic treatment-induced modification of the electrical properties of InAs p-n junctions. Tech. Phys. Lett. 35, 514–517 (2009). https://doi.org/10.1134/S1063785009060108
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785009060108