Abstract
Metal-dielectric-semiconductor (MDS) structures with aluminum nitride (AlN) as a tunnel dielectric based on high-ohmic p-type silicon substrates have been studied. The samples were characterized with respect to the charge collection efficiency and energy resolution on probing with 5.4-MeV α particles. In addition, the nature of noises and the state of the AlN-p-Si interface were investigated. It is established that the parameters of these MDS structures as radiation detectors are close to those of widely used Schottky-barrier detectors based on n-Si (Au-n-Si). A decrease in the concentration of deep centers at the AlN-p-Si interface allows the proposed MDS structures to compete successfully with n-Si based detectors, which is due to a higher purity of the initial material.
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Original Russian Text © A.M. Ivanov, N.B. Strokan, I.M. Kotina, L.M. Tukhkonen, V.V. Luchinin, A.V. Korlyakov, A.M. Efremenko, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 10, pp. 41–48.
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Ivanov, A.M., Strokan, N.B., Kotina, I.M. et al. Testing metal-dielectric-semiconductor tunnel structures on p-silicon as nuclear particle detectors. Tech. Phys. Lett. 35, 459–462 (2009). https://doi.org/10.1134/S1063785009050228
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DOI: https://doi.org/10.1134/S1063785009050228